类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP45H4D9HJ3Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 450V 4.6A TO251 |
|
STWA70N60DM2STMicroelectronics |
MOSFET N-CHANNEL 600V 66A TO247 |
|
DMTH6006LPSW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 17.2A/100A PWRDI |
|
IXTX3N250LWickmann / Littelfuse |
MOSFET N-CH 2500V 3A PLUS247-3 |
|
RJK0211DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING |
|
NTLJS3D9N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.3A 6PQFN |
|
IPA029N06NM5SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 87A TO220 |
|
NVB082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A D2PAK-3 |
|
UF3C065040K3SUnitedSiC |
MOSFET N-CH 650V 54A TO247-3 |
|
DMT67M8LCG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16A/64.6A 8DFN |
|
UPA1728G-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP462Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK2017DPP-B1#T2FRochester Electronics |
N-CHANNEL POWER MOSFET |