English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 64mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 3.9mA |
| 栅极电荷 (qg) (max) @ vgs: | 82 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3745 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 260W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-TDFN (8x8) |
| 包/箱: | 4-PowerTSFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK662R5-30C,118-NXPRochester Electronics |
PFET, 100A I(D), 30V, 0.0048OHM, |
|
|
BSB056N10NN3GRochester Electronics |
BSB056N10 - 12V-300V N-CHANNEL P |
|
|
BB503CCS-TL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
|
FDMC7680Rochester Electronics |
FDMC7680 - N-CHANNEL POWER TRENC |
|
|
2SK543-4-TB-ERochester Electronics |
MOSFET 30MA 20V |
|
|
2SJ361RYTR-ERochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
|
FDM606PRochester Electronics |
MOSFET P-CH 20V 6.8A 8MLP |
|
|
SQJ144EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 130A PPAK SO-8 |
|
|
ECH8304-TL-ERochester Electronics |
MOSFET P-CH 12V 9.5A 8ECH |
|
|
RF1S50N06LERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SJ598-AYRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
|
NTMFS016N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A/33A 5DFN |
|
|
UF3C065030T3SUnitedSiC |
MOSFET N-CH 650V 85A TO220-3 |
