类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 77A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10.4mOhm @ 35A, 10V |
vgs(th) (最大值) @ id: | 2.6V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 79.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3850 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 72W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | ATPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
TPN7R504PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 38A 8TSON |
![]() |
NVMFS6H801NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 24A/160A 5DFN |
![]() |
APTM50DAM19GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 163A SP6 |
![]() |
SIHG33N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO247AC |
![]() |
TPCC8093,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 21A 8TSON |
![]() |
VN10LMRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPB051NE8NGATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTMFS5C404NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
![]() |
2SK2624LS-CD11Rochester Electronics |
N-CHANNEL SILICON MOSFET |
![]() |
DMPH6050SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI333 |
![]() |
RF1S640SMRochester Electronics |
MOSFET N-CH 200V 18A TO263AB |
![]() |
MTAJ50N05HDLFKRochester Electronics |
NFET T0220FP JPN |
![]() |
2SK3225-Z-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |