English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJJ0621DPP-0P#T2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
ACMSP2303T-HFComchip Technology |
MOSFET P-CH 30V 2.7A SOT23 |
|
|
IPC60R099CPX1SA2IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
PSMN9RO-25YLC115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SIPC30N60C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
|
NVBG040N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 60A D2PAK-7 |
|
|
FS50KMJ-06F#B00Rochester Electronics |
DISCRETE / POWER MOSFET |
|
|
2SK1306-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTTFS5D9N08HTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 13A/84A 8PQFN |
|
|
FW705-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
NVTFS9D6P04M8LTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 13A/64A 8WDFN |
|
|
STY30N50ERochester Electronics |
NFET T0264 SPCL 500V |
|
|
TK22A65X,S5XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
