English
简体中文
MEMS OSC XO 26.0000MHZ H/LV-CMOS
CBL TIE LOCKING BLK 50LBS 9.84"
MOSFET N-CH 1000V 2.1A TO220
MEMS OSC ULTRA LOW POWER LVCMOS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.3Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 6V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 26 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1456 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 Isolated Tab |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SCT30N120D2STMicroelectronics |
SICFET N-CH 1200V 40A HIP247 |
|
|
FCMT080N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 38A 4TDFN |
|
|
TK28V65W,LQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
|
NTTFS5CS73NLTAGSanyo Semiconductor/ON Semiconductor |
T6 60V NCH LL IN U8FL |
|
|
NVTFWS002N04CLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 28A/142A 8WDFN |
|
|
RJK0392DPA-WS#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
STFU18N60M2STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
|
|
RF1S530SM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
DMP2040UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V TSOT26 |
|
|
MCAC28P06Y-TPMicro Commercial Components (MCC) |
P-CHANNEL MOSFET, DFN5060 |
|
|
2N6767Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK3326(9)AZRochester Electronics |
DISCRETE / POWER MOSFET |
|
|
FS5ASJ-06F-T13#B00Rochester Electronics |
N-CHANNEL POWER MOSFET |