English
简体中文
RELAY GEN PURPOSE DPDT 8A 12V
MOSFET N-CH 55V 8-DIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HTMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 400mOhm @ 100mA, 5V |
| vgs(th) (最大值) @ id: | 2.4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.3 nC @ 5 V |
| vgs (最大值): | 10V |
| 输入电容 (ciss) (max) @ vds: | 290 pF @ 28 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tj) |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | - |
| 包/箱: | 8-CDIP Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NDCTR05120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 5A SMD |
|
|
AUIRFP46310ZRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
|
PSMN6R9-100YSFQNexperia |
PSMN6R9-100YSF/SOT669/LFPAK |
|
|
2SK3055(1)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TPCP8J01(TE85L,F,MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 32V 5.5A PS-8 |
|
|
HAT2019R-EL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTLJS4D7N03HTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.6A 6PQFN |
|
|
NVMFS6H836NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 16A/77A 5DFN |
|
|
RSD045P05TLROHM Semiconductor |
MOSFET P-CH 45V CPT3 |
|
|
SI4835DYRochester Electronics |
P-CHANNEL MOSFET |
|
|
RF1K49223Rochester Electronics |
DUAL P-CHANNEL POWER MOSFET |
|
|
IAUC120N04S6N006ATMA1IR (Infineon Technologies) |
IAUC120N04S6N006ATMA1 |
|
|
IRFS740BRochester Electronics |
N-CHANNEL POWER MOSFET |