类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 4.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 25mOhm @ 8.2A, 4.5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 9.6 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 829.9 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 780mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PH6930DL115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
STD2002T4-ONRochester Electronics |
NFET DPAK SPCL 60V TR |
|
IRFU221Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FL6L52010LPanasonic |
MOSFET P-CH 20V 2A WSSMINI6-F1 |
|
IPL60R060CFD7AUMA1IR (Infineon Technologies) |
MOSFET N CH |
|
TK31Z60X,S1FToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
PMPB25ENEA115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
MAX8585EUARochester Electronics |
MAX8585 ORING MOSFET CONTROLLER |
|
IPB0401NM5SATMA1IR (Infineon Technologies) |
TRENCH >=100V |
|
IRFP362Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ208-T1-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDBL9401-F085T6Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 58.4/240A 8HPSOF |
|
5HN01C-TB-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 100MA SMD |