类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 50 V |
电流 - 连续漏极 (id) @ 25°c: | 130mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 10Ohm @ 100mA, 5V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 1.3 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 73 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 360mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CPH3442-TL-ERochester Electronics |
MOSFET N-CH 30V 6.5A 3CPH |
|
PH3530DL115Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
DMP6250SFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V U-DFN2020- |
|
IPB65R125CFD7ATMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
RJK0353DPA-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUF76129P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK7R7P10PL,RQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
NX7002BKXB147Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IXTY02N50D-TRLWickmann / Littelfuse |
MOSFET N-CH |
|
IRFF9131Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMN3110LCP3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.2A 3DFN |
|
NTMFS024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8A/25A 5DFN |
|
TK1R4S04PB,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 120A DPAK |