English
简体中文
MOSFET N-CH 60V 22A/100A 5DFN
44A0121-18-9/96CS2275
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2200 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.7W (Ta), 79W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
2SK3288ENTL-ERochester Electronics |
N-CHANNEL MOSFET |
|
|
2SJ210-T2B-ARochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
2SK3116B(1)-ZK-E2-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
PMZB370UNE,315-NEXRochester Electronics |
EFFECT TRANSISTOR, 0.9A I(D), 30 |
|
|
IPL60R115CFD7AUMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
2SK1567-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMFS5C442NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/140A 5DFN |
|
|
SPD1305NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK1582(0)-T1B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
FDMS86581Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A 8PQFN |
|
|
NTMFS6H852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/42A 5DFN |
|
|
IPB031NE7N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPB65R155CFD7ATMA1IR (Infineon Technologies) |
HIGH POWER_NEW |