类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 15mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 881 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 50W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PQFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS6H852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/42A 5DFN |
|
IPB031NE7N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB65R155CFD7ATMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
2SJ302-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTHL019N65S3HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
FDPF2D3N10CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 222A TO220F |
|
NVMFSC1D6N06CLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 35A/224A 8DFN |
|
2SK2499-S-AZRochester Electronics |
DISCRETE / POWER MOSFET |
|
SIPC14N80C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
NTMTS0D7N04CLTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 67A/433A 8DFNW |
|
2SJ325-Z-E1-AYRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
BUK7506-55A127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03K1DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |