English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET®, StrongIRFET™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 195A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.9mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.5 V @ 137 nC |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 25 V @ 8320 pF |
| 场效应管特征: | - |
| 功耗（最大值）: | 231W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK (TO-263) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMP2042UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.6A U-WLB1010-4 |
|
|
DMT2004UFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 24V 70A POWERDI3333 |
|
|
RLD03N06CLERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK03J4DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
|
SPP11N60S5XKSA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
|
RJK4512DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
JDX6002Rochester Electronics |
NFET T0220FP JPN |
|
|
BSC090BNSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RF1S25N06SM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
BSC205N10LSGATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK0348DPA-00#J0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
4AK15Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPP045N10N3GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
