English
简体中文
BRIDGE RECT 1PHASE 400V 2A KBPM
N-CHANNEL POWER MOSFET
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RJK0348DPA-00#J0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
4AK15Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPP045N10N3GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
|
BSS84AKW/DG/B2215Rochester Electronics |
P-CHANNEL MOSFET |
|
|
RJK03J6DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
|
RQA0011DNS#G1Rochester Electronics |
DISCRETE / POWER MOSFET |
|
|
RJK0394DPA-WS#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
RVQ040N05HZGTRROHM Semiconductor |
MOSFET N-CH 45V 4A TSMT6 |
|
|
RFD8P06ESMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
YJL03N06A-F2-0000HF |
N-CH MOSFET 60V 3A SOT-23-3L |
|
|
DMT10H4M5LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 61V-100V POWERDI50 |
|
|
MAX8535AEUARochester Electronics |
MAX8535 ORING MOSFET CONTROLLER |
|
|
SIHG22N60EL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO247AC |