类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 75mOhm @ 22A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 256 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5740 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 400W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 (IXTH) |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMCM950ENEZNexperia |
MOSFET N-CH 60V 4.8A 9WLCSP |
|
2N6895Rochester Electronics |
P-CHANNEL, MOSFET |
|
NVTFS8D1N08HTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 80V 61A |
|
IPC30S2SN08NX2MA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
SIA430DJT-T4-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12A/12A PPAK |
|
DMT32M5LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 150A PWRDI5060-8 |
|
DMN67D8LT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V SOT523 T&R |
|
NVMFS6H824NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/110A 5DFN |
|
TPN2R503NC,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 40A 8TSON-ADV |
|
TK2K2A60F,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
2SK681A-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDB1D7N10CL7Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 268A D2PAK |
|
NVBGS4D1N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 20A/185A D2PAK |