类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta), 42A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 13.1mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 2V @ 45µA |
栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 906 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 3.6W (Ta), 54W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK3570-ZK-E1-AZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SIHH186N60EF-T1GE3Vishay / Siliconix |
MOSFET N-CH 600V 16A PPAK 8 X 8 |
|
NTH4L160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 17.3A TO247 |
|
2N7002W-GComchip Technology |
MOSFET N-CH 60V 0.25A SOT323 |
|
SIPC03N50C3X1SA1IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
2SK1283(1)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP152Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT1201R6BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A TO-247 |
|
IRF9633Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RF1S30N06LESM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2372(1)-ARochester Electronics |
DISCRETE / POWER MOSFET |
|
STFU25N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
|
PMZ130UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |