English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RF1S4N100SM9ARochester Electronics |
MOSFET N-CH 1000V 4.3A TO263AB |
|
|
H5N3301LSTL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK4212A-ZK-E1-AYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
HTNFET-TCHoneywell Aerospace |
MOSFET N-CH 55V 4-PIN |
|
|
UPA1716G-E1-ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
NVMFS6H864NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A/22A 5DFN |
|
|
TK33S10N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 33A DPAK |
|
|
2SJ325-Z-AZRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
RFW2N06RLERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RFL1N15Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMFS10N3D2CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 151A POWER56 |
|
|
2SK2935-92-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK0358DSP-01#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
