English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 171A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 80mOhm @ 85.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 30mA |
| 栅极电荷 (qg) (max) @ vgs: | 1650 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 43500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5000W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SP6 |
| 包/箱: | SP6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCH029N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
|
2SJ451ZK-TL-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
IPI80404S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK0331DPB-01#J0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
UPA2702TP-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVD4856NT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 13.3A/89A DPAK |
|
|
RJK0397DPA-0G#J7ARochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
IPW65R090CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
YJL05N04A-F2-0000HF |
N-CH MOSFET 40V 5A SOT-23-3L |
|
|
SIJ150DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 45V 30.9A/110A PPAK |
|
|
IPI60R165CPXKSA1IR (Infineon Technologies) |
HIGH POWER_LEGACY |
|
|
IXTA180N10T7-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO263-7 |
|
|
TPN5R203PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 38A 8TSON |
