类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SJ245L-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMXB350UPE147Rochester Electronics |
SMALL SIGNAL FET |
|
SIA456DJ-T3-GE3Vishay / Siliconix |
MOSFET N-CH 200V 1.1A/2.6A PPAK |
|
DMP3007SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 25V~30V POWERDI5060-8 |
|
SPB80N06SL-07Rochester Electronics |
N-CHANNEL AUTOMOTIVE MOSFET |
|
NE5550279A-T1A-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TK110E10PL,S1XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
DMN1004UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 15A 6UDFN |
|
RJK03M4DPA-00#J5ARenesas Electronics America |
MOSFET N-CH 30V 35A 8WPAK |
|
IRF633Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK5014DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUF76121S3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IST006N04NM6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 58A/475A HSOF-5 |