English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.6mOhm @ 17.5A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2170 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-WPAK |
| 包/箱: | 8-WFDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF633Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK5014DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
HUF76121S3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IST006N04NM6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 58A/475A HSOF-5 |
|
|
RLD03N06CLESMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK3433-ZJ-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FM6K62010LPanasonic |
MOSFET N-CH 20V 2A WSMINI6 |
|
|
RJK0358DPA-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK3116(1)-ZK-E2-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVMTS0D7N06CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 60.5A/464A 8DFNW |
|
|
FDW2515NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK1852-T-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SIHB11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A D2PAK |
