类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 4.3A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 50mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 11.8 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 642 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.38W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUXHMF1404ZSTRLIR (Infineon Technologies) |
MOSFET N-CH TO263-3 |
|
NP80N055KLE-E2-AYRenesas Electronics America |
TRANSISTOR |
|
JAN2N6849UMicrosemi |
MOSFET P-CH 100V 6.5A 18ULCC |
|
IRC730PBFVishay / Siliconix |
MOSFET N-CH 400V 5.5A TO220-5 |
|
IXFD80N20Q-8XQWickmann / Littelfuse |
MOSFET N-CHANNEL 200V DIE |
|
RJK03M5DNS-WS#J5Renesas Electronics America |
IGBT |
|
NP48N055KHE-E1-AYRenesas Electronics America |
TRANSISTOR |
|
APTC60DAM24CT1GMicrosemi |
MOSFET N-CH 600V 95A SP4 |
|
IRF6892STR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 28A DIRECTFET |
|
IRFC4468DIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
IPC60R070CFD7X7SA1IR (Infineon Technologies) |
MOSFET N-CH HI POWER WAFER |
|
5HP01C-TB-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 70MA SMD |
|
IRF6100PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 5.1A 4FLIPFET |