类型 | 描述 |
---|---|
系列: | * |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMC6683PZRochester Electronics |
14A, 20V, 0.0084OHM, P-CHANNEL , |
|
UPA2794GR(0)-E1-AZRenesas Electronics America |
TRANSISTOR |
|
R6020ENZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 20A TO247 |
|
FCPF190N60-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220F-3 |
|
FCPF260N60E-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 15A TO220F-3 |
|
IXFL70N60Q2Wickmann / Littelfuse |
MOSFET N-CH 600V 37A ISOPLUS264 |
|
2SJ600-Z-E1-AZRenesas Electronics America |
TRANSISTOR |
|
APT25SM120SMicrosemi |
SICFET N-CH 1200V 25A D3 |
|
JAN2N7227Microsemi |
MOSFET N-CH 400V 14A TO254AA |
|
IRFC9140NBIR (Infineon Technologies) |
MOSFET 100V 23A DIE |
|
JAN2N6766Microsemi |
MOSFET N-CH 200V 30A TO3 |
|
V30434-T1-GE3Vishay / Siliconix |
MOSFET N-CH SMD |
|
AONS36390Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 5X6 DFN |