English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 149A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 74.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 10mA |
| 栅极电荷 (qg) (max) @ vgs: | 364 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 17500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1250W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | Module |
| 包/箱: | J3 Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SFT1342-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A IPAK/TP |
|
|
FCPF190N65FL1-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20.6A TO220F-3 |
|
|
JANTXV2N7227UMicrosemi |
MOSFET N-CH 400V 14A TO267AB |
|
|
RJK0660DPA-WS#J5ARenesas Electronics America |
IGBT |
|
|
RJK1003DPP-A0#T2Renesas Electronics America |
MOSFET N-CH 100V 50A TO220FPA |
|
|
RJK1053DPB-WS#J5Renesas Electronics America |
IGBT |
|
|
NP22N055SLE(1)-E1-AYRenesas Electronics America |
TRANSISTOR |
|
|
IXUV170N075SWickmann / Littelfuse |
MOSFET N-CH 75V 175A PLUS-220SMD |
|
|
IXFL44N60Wickmann / Littelfuse |
MOSFET N-CH 600V 41A ISOPLUS264 |
|
|
JAN2N6796Microsemi |
MOSFET N-CH 100V 8A TO39 |
|
|
MSC140SMA120SMicrosemi |
MOSFET N-CH 1200V D3PAK |
|
|
R6515ENZC8ROHM Semiconductor |
MOSFET N-CH 650V 15A TO3 |
|
|
JANSR2N7380Microsemi |
MOSFET N-CH 100V 14.4A TO257 |
