类型 | 描述 |
---|---|
系列: | * |
包裹: | Tray |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDZ5047NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A 36BGA |
|
TPCP8001-H(TE85LFMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 7.2A PS-8 |
|
JANTX2N6756Microsemi |
MOSFET N-CH 100V 14A TO204AA |
|
FDM100-0045SPWickmann / Littelfuse |
MOSFET N-CH 55V 100A I4PAC |
|
TPCC8009,LQ(OToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 24A 8TSON |
|
IRC644PBFVishay / Siliconix |
MOSFET N-CH 250V 14A TO220-5 |
|
SI5481DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK |
|
2SK3132(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 50A TO3P |
|
BUK9214-80EJNexperia |
MOSFET N-CH 80V DPAK |
|
FCPF400N80ZL1-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 11A TO220F-3 |
|
TPCC8067-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 9A 8TSON |
|
JANTXV2N6798Microsemi |
MOSFET N-CH 200V 5.5A TO205AF |
|
AOD2NL60_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO252 |