类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/556 |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 2.25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.6Ohm @ 2.25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 800mW (Ta), 15W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-39 |
包/箱: | TO-205AF Metal Can |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS9435ANBAD008Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC |
|
MCB60I1200TZWickmann / Littelfuse |
1200V 90A SIC POWER MOSFET |
|
NTMFS4C054NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22.5A/80A 5DFN |
|
JANTX2N6766Microsemi |
MOSFET N-CH 200V 30A TO3 |
|
IRLML6402TRPBF-1IR (Infineon Technologies) |
MOSFET P-CH 20V 3.7A SOT23 |
|
FCPF600N60ZL1-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.4A TO220F |
|
NTMFS4C705NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V SO8FL |
|
RJK03M2DPA-WS#J5ARenesas Electronics America |
IGBT |
|
STU5NK50ZSTMicroelectronics |
MOSFET |
|
IRFC4468EDIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
SUC85N15-19DWFVishay / Siliconix |
MOSFET N-CH |
|
APT1002RBNGMicrosemi |
MOSFET N-CH 1000V 8A TO247AD |
|
IRCZ44PBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220-5 |