English
简体中文
INDUCTORS WE-GF
CONN RCPT USB2.0 TYPEA 4POS PCB
MOSFET N-CH 1000V 8A TO247AD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS IV® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.6Ohm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 240W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AD |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRCZ44PBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220-5 |
|
|
FQE10N20LCTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 4A TO126-3 |
|
|
H5N2901FL-M0-E#T2Renesas Electronics America |
IC MOSFET N-CH TO-220FL |
|
|
2SK3388(TE24L,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 20A 4TFP |
|
|
64-4073PBFIR (Infineon Technologies) |
IC MOSFET |
|
|
JANTXV2N6849UMicrosemi |
MOSFET P-CH 100V 6.5A 18ULCC |
|
|
APT130SM70SMicrosemi |
MOSFET N-CH 700V D3PAK |
|
|
IRFH7187TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 18A/105A 8PQFN |
|
|
JANTXV2N6756Microsemi |
MOSFET N-CH 100V 14A TO204AA |
|
|
R6015ANZFU7C8ROHM Semiconductor |
MOSFET N-CH 600V 15A TO3 |
|
|
SPP11N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO-220 |
|
|
TPCC8065-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 13A 8TSON |
|
|
JANSR2N7381Microsemi |
MOSFET N-CH 200V 9.4A TO257 |