类型 | 描述 |
---|---|
系列: | STripFET™ F7 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 32A (Ta), 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.4mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 79.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4825 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 4.8W (Ta), 166W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2N7228Microsemi |
MOSFET N-CH 500V 12A TO254AA |
|
UPA1763G(0)-E1-AYRenesas Electronics America |
TRANSISTOR |
|
AOI4TL60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO251A |
|
IRFC4768EDIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
IXTD3N60P-2JWickmann / Littelfuse |
MOSFET N-CH 600V 3A DIE |
|
PSMN2R1-60CSJNexperia |
MOSFET N-CH 60V DPAK |
|
IXTV02N250SWickmann / Littelfuse |
MOSFET N-CH 2500V 200MA PLUS220 |
|
TPCA8A02-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 34A 8SOP |
|
NP88N075KUE-E2-AYRenesas Electronics America |
TRANSISTOR |
|
IRFC9024NBIR (Infineon Technologies) |
MOSFET 55V 11A DIE |
|
NP60N03SUG(1)-E1-AYRenesas Electronics America |
TRANSISTOR |
|
FCPF380N60-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.2A TO220F-3 |
|
APT80SM120BMicrosemi |
SICFET N-CH 1200V 80A TO247 |