English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSV-H |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 34A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.3mOhm @ 17A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3430 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta), 45W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOP Advance (5x5) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NP88N075KUE-E2-AYRenesas Electronics America |
TRANSISTOR |
|
|
IRFC9024NBIR (Infineon Technologies) |
MOSFET 55V 11A DIE |
|
|
NP60N03SUG(1)-E1-AYRenesas Electronics America |
TRANSISTOR |
|
|
FCPF380N60-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.2A TO220F-3 |
|
|
APT80SM120BMicrosemi |
SICFET N-CH 1200V 80A TO247 |
|
|
AOW10T60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 600V 10A TO262 |
|
|
RJK03M3DPA-WS#J5ARenesas Electronics America |
IGBT |
|
|
AOI4144_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A/55A TO251A |
|
|
WPB4001-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 26A TO3P-3L |
|
|
JANTX2N6762Microsemi |
MOSFET N-CH 500V 4.5A TO204AA |
|
|
AON7452LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8DFN |
|
|
JAN2N6901Microsemi |
MOSFET N-CH 100V 1.69A TO205AF |
|
|
R6030ENZC17ROHM Semiconductor |
MOSFET N-CH 600V 30A TO3PF |
