English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tray |
| 零件状态: | Active |
| igbt型: | - |
| 配置: | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| 电流 - 集电极 (ic) (max): | - |
| 功率 - 最大值: | - |
| vce(on) (max) @ vge, ic: | - |
| 电流 - 集电极截止（最大值）: | - |
| 输入电容 (cies) @ vce: | - |
| 输入: | - |
| ntc热敏电阻: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT150GN60JRoving Networks / Microchip Technology |
IGBT MOD 600V 220A 536W ISOTOP |
|
FZ2400R17HP4B2BOSA2IR (Infineon Technologies) |
IGBT MODULE 1700V 4800A |
|
FZ800R33KF2CS1NDSA1Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
FF300R07KE4HOSA1IR (Infineon Technologies) |
IGBT MODULE 650V 940W |
|
FF200R33KF2CNOSA1Rochester Electronics |
IGBT MODULE |
|
FS100R12KS4BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 130A 660W |
|
FS150R07N3E4B11BOSA1Rochester Electronics |
IGBT MODULE |
|
FF400R06KE3HOSA1IR (Infineon Technologies) |
IGBT MOD 600V 500A 1250W |
|
FPF2G120BF07ASSanyo Semiconductor/ON Semiconductor |
IGBT MODULE 650V 40A 156W F2 |
|
APTGT50DH120TGRoving Networks / Microchip Technology |
IGBT MODULE 1200V 75A 277W SP4 |
|
DD1200S12H4HOSA1IR (Infineon Technologies) |
IGBT MODULE 1200V 1200A |
|
FP50R07N2E4BOSA1IR (Infineon Technologies) |
IGBT MODULE 650V 70A |
|
FS450R12OE4BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 660A 2250W |
