English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GenX3™, XPT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 1200 V |
| 电流 - 集电极 (ic) (max): | 240 A |
| 电流 - 集电极脉冲 (icm): | 700 A |
| vce(on) (max) @ vge, ic: | 3.2V @ 15V, 120A |
| 功率 - 最大值: | 1500 W |
| 开关能量: | 6.75mJ (on), 5.1mJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 412 nC |
| td（开/关）@ 25°c: | 35ns/176ns |
| 测试条件: | 600V, 100A, 1Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-264-3, TO-264AA |
| 供应商设备包: | TO-264 (IXYK) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IKW75N60TXKRochester Electronics |
IKW75N60 - DISCRETE IGBT WITH AN |
|
IGW40N65F5FKSA1IR (Infineon Technologies) |
IGBT 650V 74A TO247-3 |
|
APT50GF120B2RGRoving Networks / Microchip Technology |
IGBT 1200V 135A 781W TMAX |
|
IRG4BC15UDPBFRochester Electronics |
IGBT, 14A, 600V, N-CHANNEL |
|
RJH60D7DPK-00#T0Renesas Electronics America |
IGBT 600V 90A 300W TO3P |
|
IRGS4B60KD1PBFRochester Electronics |
IGBT, 11A, 600V, N-CHANNEL |
|
RGT16NS65DGTLROHM Semiconductor |
IGBT 650V 16A 94W TO-263S |
|
HGTD1N120BNS9ASanyo Semiconductor/ON Semiconductor |
IGBT 1200V 5.3A 60W TO252AA |
|
IGB30N60H3ATMA1IR (Infineon Technologies) |
IGBT 600V 60A 187W TO263-3 |
|
HGTG12N60A4DSanyo Semiconductor/ON Semiconductor |
IGBT 600V 54A 167W TO247 |
|
STGW75M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
|
STGW60H65FBSTMicroelectronics |
IGBT 650V 80A 375W TO247 |
|
APT36GA60BRoving Networks / Microchip Technology |
IGBT 600V 65A 290W TO-247 |
