







 
                            CRYSTAL 22.5792MHZ 4PF SMD
 
                            IGBT 1200V 38A 200W TO247AD
 
                            IC EEPROM 2KBIT SPI 2MHZ 8SOIC
 
                            OSC XO 475MHZ 1.8V HCSL
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| igbt型: | NPT | 
| 电压 - 集电极发射极击穿(最大值): | 1200 V | 
| 电流 - 集电极 (ic) (max): | 38 A | 
| 电流 - 集电极脉冲 (icm): | 50 A | 
| vce(on) (max) @ vge, ic: | 3V @ 15V, 20A | 
| 功率 - 最大值: | 200 W | 
| 开关能量: | 3.1mJ (on), 2.4mJ (off) | 
| 输入类型: | Standard | 
| 栅极电荷: | 70 nC | 
| td(开/关)@ 25°c: | - | 
| 测试条件: | 600V, 20A, 82Ohm, 15V | 
| 反向恢复时间 (trr): | 40 ns | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Through Hole | 
| 包/箱: | TO-3P-3 Full Pack | 
| 供应商设备包: | TO-247AD | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IGB20N65S5ATMA1IR (Infineon Technologies) | IGBT PRODUCTS | 
|   | NGD15N41ACLT4GRochester Electronics | INSULATED GATE BIPOLAR TRANSISTO | 
|   | APT95GR65B2Roving Networks / Microchip Technology | IGBT 650V 208A 892W T-MAX | 
|   | APT75GN60BGRoving Networks / Microchip Technology | IGBT 600V 155A 536W TO247 | 
|   | IXXH75N60C3Wickmann / Littelfuse | IGBT 600V 150A 750W TO247 | 
|   | IRG4BC30S-STRLPRochester Electronics | IGBT | 
|   | ISL9V3036D3STRochester Electronics | N-CHANNEL IGBT | 
|   | FGA50N100BNTD2Sanyo Semiconductor/ON Semiconductor | IGBT 1000V 50A 156W TO3P | 
|   | IGZ100N65H5XKSA1IR (Infineon Technologies) | IGBT TRENCH 650V 161A TO247-4 | 
|   | APT50GR120LRoving Networks / Microchip Technology | IGBT 1200V 117A 694W TO264 | 
|   | IXYR50N120C3D1Wickmann / Littelfuse | IGBT 1200V 56A 290W ISOPLUS247 | 
|   | IXXH100N60C3Wickmann / Littelfuse | IGBT 600V 190A 830W TO247AD | 
|   | IRG4BC30KDPBF-INFRochester Electronics | IGBT, 28A I(C), 600V V(BR)CES, N |