English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 45 A |
| 电流 - 集电极脉冲 (icm): | 108 A |
| vce(on) (max) @ vge, ic: | 2.5V @ 15V, 12A |
| 功率 - 最大值: | 167 W |
| 开关能量: | 55µJ (on), 100µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 23 nC |
| td（开/关）@ 25°c: | 6ns/40ns |
| 测试条件: | 390V, 12A, 10Ohm, 15V |
| 反向恢复时间 (trr): | 46 ns |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-3 |
| 供应商设备包: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NGTB50N60FL2WGSanyo Semiconductor/ON Semiconductor |
IGBT 600V 50A TO247 |
|
IRGS4062DTRLPBFIR (Infineon Technologies) |
IGBT DISCRETES |
|
SGB02N60ATMA1IR (Infineon Technologies) |
IGBT 600V 6A 30W TO263-3 |
|
ISL9V2040D3SSanyo Semiconductor/ON Semiconductor |
IGBT 430V 10A 130W TO252AA |
|
HGTP2N120CNSanyo Semiconductor/ON Semiconductor |
IGBT 1200V 13A 104W TO220AB |
|
STGW20NB60KDSTMicroelectronics |
IGBT 600V 50A 170W TO247 |
|
IRGBC30FIR (Infineon Technologies) |
IGBT FAST 600V 31A TO-220AB |
|
IRG4BC10SDIR (Infineon Technologies) |
IGBT 600V 14A 38W TO220AB |
|
IXGH32N60CD1Wickmann / Littelfuse |
IGBT 600V 60A 200W TO247AD |
|
SGL5N150UFTUSanyo Semiconductor/ON Semiconductor |
IGBT 1500V 10A 125W TO264 |
|
IXGT20N120BD1Wickmann / Littelfuse |
IGBT 1200V 40A 190W TO268 |
|
IXGT24N170Wickmann / Littelfuse |
IGBT 1700V 50A 250W TO268 |
|
IRG4PC30KDPBFIR (Infineon Technologies) |
IGBT 600V 28A 100W TO247AC |
