类型 | 描述 |
---|---|
系列: | HiPerFAST™ |
包裹: | Tube |
零件状态: | Active |
igbt型: | - |
电压 - 集电极发射极击穿(最大值): | 900 V |
电流 - 集电极 (ic) (max): | 51 A |
电流 - 集电极脉冲 (icm): | 120 A |
vce(on) (max) @ vge, ic: | 2.7V @ 15V, 28A |
功率 - 最大值: | 200 W |
开关能量: | 1.2mJ (off) |
输入类型: | Standard |
栅极电荷: | 100 nC |
td(开/关)@ 25°c: | 30ns/100ns |
测试条件: | 720V, 28A, 4.7Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247AD (IXGH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APT13GP120KGMicrosemi |
IGBT 1200V 41A 250W TO220 |
|
RJP4301APP-M0#T2Renesas Electronics America |
IGBT 430V TO200FL |
|
IXGT30N60B2D1Wickmann / Littelfuse |
IGBT 600V 70A 190W TO268 |
|
IXSK35N120BD1Wickmann / Littelfuse |
IGBT 1200V 70A 300W TO264 |
|
IXGP12N60BWickmann / Littelfuse |
IGBT 600V 24A 100W TO220AB |
|
FGA90N33ATTUSanyo Semiconductor/ON Semiconductor |
IGBT 330V 90A 223W TO3P |
|
IRG4RC10KDPBFIR (Infineon Technologies) |
IGBT 600V 9A 38W DPAK |
|
APT11GF120BRDQ1GMicrosemi |
IGBT 1200V 25A 156W TO247 |
|
IXGT60N60Wickmann / Littelfuse |
IGBT 600V 75A 300W TO268 |
|
HGT1S20N35G3VLSSanyo Semiconductor/ON Semiconductor |
IGBT 380V 20A 150W TO263AB |
|
IRG4BC10KPBFIR (Infineon Technologies) |
IGBT 600V 9A 38W TO220AB |
|
IXGX40N120BD1Wickmann / Littelfuse |
IGBT 1200V PLUS247 |
|
IRG6I330U-110PIR (Infineon Technologies) |
IGBT 330V 28A 43W TO220ABFP |