类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
igbt型: | NPT |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 100 A |
电流 - 集电极脉冲 (icm): | 150 A |
vce(on) (max) @ vge, ic: | 3.15V @ 15V, 50A |
功率 - 最大值: | 416 W |
开关能量: | 1.96mJ |
输入类型: | Standard |
栅极电荷: | 179 nC |
td(开/关)@ 25°c: | 47ns/310ns |
测试条件: | 400V, 50A, 6.8Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | PG-TO247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HGT1S12N60C3S9AR4501Rochester Electronics |
27A, 600V, UFS N-CHANNEL IGBT |
|
HGTD3N60B3S9ARochester Electronics |
7A, 600V, UFS N-CHANNEL IGBT |
|
FZ1600R17HP4_B21Rochester Electronics |
FZ1600R17 - IGBT MODULE |
|
ISL9V3036D3STVSanyo Semiconductor/ON Semiconductor |
IGBT, 360V, 17A, 1.58V, 300MJ, D |
|
FP75R07N2E4Rochester Electronics |
FP75R07 - IGBT MODULE |
|
IGC11T120T8LX1SA1IR (Infineon Technologies) |
IGBT 1200V 8A SAWN ON FOIL |
|
FF225R12ME4_B11Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
IKFW50N60ETXKSA1IR (Infineon Technologies) |
INDUSTRY 14 |
|
RJP4006AGE-00#P5Rochester Electronics |
IGBTS, 400V, 120A, N-CHANNEL |
|
FGH75T65UPD-F155Sanyo Semiconductor/ON Semiconductor |
650V,75A FIELD STOP TRENCH IGBT |
|
HGTP10N50E1DRochester Electronics |
17.5A, 500V, N-CHANNEL IGBT |
|
RJP3053DPP-A9#T2FRochester Electronics |
HIGH SPEED IGBT, 300V, 30A |
|
FP40R12KT3GRochester Electronics |
FP40R12 - IGBT MODULE |