类型 | 描述 |
---|---|
系列: | TrenchStop™ |
包裹: | Bulk |
零件状态: | Active |
igbt型: | Trench Field Stop |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 15 A |
电流 - 集电极脉冲 (icm): | 45 A |
vce(on) (max) @ vge, ic: | 1.9V @ 15V, 15A |
功率 - 最大值: | - |
开关能量: | - |
输入类型: | Standard |
栅极电荷: | - |
td(开/关)@ 25°c: | - |
测试条件: | - |
反向恢复时间 (trr): | - |
工作温度: | -40°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRG7CH42UEDIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
SIGC14T60SNCX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC18T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
GT50J121(Q)Toshiba Electronic Devices and Storage Corporation |
IGBT 600V 50A 240W TO3P LH |
|
SIGC25T60UNX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IXGM40N60Wickmann / Littelfuse |
POWER MOSFET TO-3 |
|
IHY30N160R2XKSA1IR (Infineon Technologies) |
IGBT 1600V 30A 312W TO247HC-3 |
|
SIGC54T60R3EX1SA3IR (Infineon Technologies) |
IGBT CHIP |
|
SIGC121T60NR2CX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC14T60NCX1SA6IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IGC54T65R3QEX1SA1IR (Infineon Technologies) |
IGBT CHIP |
|
SIGC18T60UNX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SGTB11N60R2DT4GSanyo Semiconductor/ON Semiconductor |
RC2 IGBT 10A 600V DPAK |