类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
电压 - 击穿 (v(br)gss): | 30 V |
漏源电压 (vdss): | - |
电流 - 漏极 (idss) @ vds (vgs=0): | 30 µA @ 10 V |
电流消耗 (id) - 最大值: | - |
电压 - 截止 (vgs off) @ id: | 1.7 V @ 1 nA |
输入电容 (ciss) (max) @ vds: | - |
电阻 - rds(on): | - |
功率 - 最大值: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
LS5301 TO-18 3LLinear Integrated Systems, Inc. |
HIGH IMPEDANCE, SINGLE, N-CHANNE |
|
TF202THC-3-TL-HRochester Electronics |
TRANS JFET N-CH |
|
MMBFJ113Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 35V 350MW SOT23 |
|
MMBFJ177LT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
J111RL1GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
MMBF4392Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
2N4858ACentral Semiconductor |
JFET N-CH 40V 0.36W TO-18 |
|
TF414T5GSanyo Semiconductor/ON Semiconductor |
JFET N-CH 40V SOT883 |
|
PMBFJ112,215Rochester Electronics |
PMBFJ112 - N-CHANNEL FET |
|
J175Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
2SK879-GR(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
JFET N-CH 0.1W USM |
|
NSVJ6904DSB6T1GSanyo Semiconductor/ON Semiconductor |
JFET -25V, 20 TO 40MA DUA |
|
NTE2937NTE Electronics, Inc. |
JFET P-CHANNEL 30V TO-92 |