类型 | 描述 |
---|---|
系列: | F-RAM™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FRAM |
技术: | FRAM (Ferroelectric RAM) |
内存大小: | 512Kb (64K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M24M01-DWMN3TP/KSTMicroelectronics |
IC EEPROM 1MBIT I2C 1MHZ 8SO |
|
S29GL032N11FFIV22Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
25LC020AT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI SOT23-6 |
|
IS25LQ512B-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT SPI/QUAD 8SOIC |
|
S29GL128S11FHIV20Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MT29F2G08ABAEAH4-AATX:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
IS46R16160D-6BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
24AA128-I/MSRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8MSOP |
|
24AA515-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
IS43DR16128C-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
CY7C194-20VCRochester Electronics |
STANDARD SRAM, 64KX4, 20NS, CMOS |
|
CY15B104Q-SXICypress Semiconductor |
IC FRAM 4MBIT SPI 40MHZ 8SOIC |
|
71V416S12BERenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |