类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 2Gb (64M x 32) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-LFBGA |
供应商设备包: | 90-WBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14B104K-ZS25XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
7142LA100CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
24AA014HT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8TDFN |
|
BR24T08FVM-WTRROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
M24C16-WMN6PSTMicroelectronics |
IC EEPROM 16KBIT I2C 400KHZ 8SO |
|
70V261L25PFGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
CY62147CV30LL-55BAIRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
FEMC008GTTE7-T14-16Flexxon |
IC FLASH 64GBIT EMMC 153FBGA |
|
FM93C56VM8XRochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
IS61LPS102418B-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
S25FS512SAGNFI013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
CY62148EV30LL-45BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36VFBGA |
|
AT28C256-20LM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |