English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 2Mb (128K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4.2 ns |
| 电压 - 电源: | 3.15V ~ 3.45V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 208-LFBGA |
| 供应商设备包: | 208-CABGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL256SAGBHVB00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
93LC66B-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
24LC01BT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
|
PC28F256P30TFEFlip Electronics |
IC FLASH 256MBIT PAR 64EASYBGA |
|
CY7C1543KV18-450BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1514KV18-250BZXCCypress Semiconductor |
NO WARRANTY |
|
W949D2DBJX5I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
S29GL512S10FHI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
70V657S12BFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
24FC04H-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
MT29F2G08ABAGAWP-AITES:GMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
MT46V64M8P-5B:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MX29GL512FDT2I-12GMacronix |
IC FLASH 512MBIT PARALLEL 56TSOP |
