类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EM6GE16EWXD-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S25FL128SDSNFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IS66WVH16M8DALL-166B1LIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 128MBIT PAR 24TFBGA |
|
CAT93C86BVI-GT3Rochester Electronics |
CAT93C86 - 16-KBIT MICROWIRE SER |
|
93AA66AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DFN |
|
25LC160D-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
IS62WV51216EALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
CY7C12501KV18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1340A-66AIRochester Electronics |
IC SRAM 4MBIT 66MHZ |
|
MT52L256M32D1PF-093 WT:B TRMicron Technology |
IC DRAM 8GBIT 1067MHZ 178FBGA |
|
MT29F1T08EEHAFJ4-3ITFES:AMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
S29GL512T10TFA023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
CY14V101QS-SE108XQCypress Semiconductor |
IC NVSRAM 1MBIT SPI 16SOIC |