English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 6ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-VFDFN Exposed Pad |
| 供应商设备包: | 8-DFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25LC160D-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
IS62WV51216EALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
CY7C12501KV18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1340A-66AIRochester Electronics |
IC SRAM 4MBIT 66MHZ |
|
MT52L256M32D1PF-093 WT:B TRMicron Technology |
IC DRAM 8GBIT 1067MHZ 178FBGA |
|
MT29F1T08EEHAFJ4-3ITFES:AMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
S29GL512T10TFA023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
CY14V101QS-SE108XQCypress Semiconductor |
IC NVSRAM 1MBIT SPI 16SOIC |
|
CY7C1352G-166AXIRochester Electronics |
ZBT SRAM, 256KX18, 3.5NS |
|
CY7C1061GN30-10BVJXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
AS7C34098A-12TINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
S25FL128SAGBHVA03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
DS1245Y-70IND+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
