







IC EEPROM 16KBIT SPI 3MHZ 8DIP
RF SHIELD 3" X 5.5" THROUGH HOLE
IC SERIALIZER SMD
SYNTHESIZER
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8, 1K x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字,页: | 2ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CY7C1021V33-15BAIRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
|
S29GL256P10TFI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
|
CYD18S72V18-167BBXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 256FBGA |
|
|
QS7025A-55TFRochester Electronics |
MULTI-PORT SRAM, 8KX16, 55NS |
|
|
27C512-150JIRochester Electronics |
256K (32K X 8) CMOS EPROM |
|
|
DS1230W-100+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
|
S29GL512S11DHSS10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
|
71256SA12YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
|
AS6C8016-55TINTRAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
|
CY7C1460AV25-167AXCRochester Electronics |
ZBT SRAM, 1MX36, 3.4NS PQFP100 |
|
|
71256S35TDBRochester Electronics |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
|
70T3719MS133BBGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 324PBGA |
|
|
SST26VF016B-80E/SMRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIJ |