类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (128 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C199N-20PXCRochester Electronics |
STANDARD SRAM, 32KX8, 20NS |
|
93LC86C-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
FM93C56AEM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
70V08L20PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
SST39LF402C-55-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CAT25C64VA-1.8Rochester Electronics |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
CY7C1338S-100AXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C1145LV18-400BZXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
M95512-DRDW8TP/KSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
IS61NLF25636A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S25FL256SDSBHB213Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
24C00T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
MT57V512H36AF-7.5Rochester Electronics |
DDR SRAM, 512KX36, 3.6NS, CMOS, |