English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 6 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1413AV18-200BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MX25U3235EM2I-10GMacronix |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
IS43DR16640C-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
AS4C256M16D3C-93BCNAlliance Memory, Inc. |
IC DRAM 4GBIT 1.066GHZ 96FBGA |
|
AS6C4008-55SINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32SOP |
|
25AA080A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
IS42VM16320D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
IS61VF204836B-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
CY7C1312CV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
GD25Q64CSJGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
M24512-RDW6TPSTMicroelectronics |
IC EEPROM 512KBIT I2C 8TSSOP |
|
25LC080BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
IS66WVH8M8ALL-166B1LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 24TFBGA |
