类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (16M x 32) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M95128-DFMC6TGSTMicroelectronics |
IC EEPROM 128KBIT SPI 8UFDFPN |
|
S26KL256SDABHB020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
IS43R16320E-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
MR0A08BCMA35Everspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
CY7C1354CV25-166AXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
RM25C64C-LMAI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8UDFN |
|
CY7C1462KVE25-167BZICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MR25H256MDFREverspin Technologies, Inc. |
IC RAM 256KBIT SPI 40MHZ 8DFN |
|
AT25DL081-MHN-TAdesto Technologies |
IC FLASH 8MBIT SPI 100MHZ 8UDFN |
|
IS45S16160G-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY7C2570XV18-600BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS4C512M16D3LB-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
BR24T512F-3AME2ROHM Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOP |