English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-VFBGA |
| 供应商设备包: | 78-VFBGA (10.5x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT57W1MH18JF-4Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS42S32160F-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
S29GL256S90FHI013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S29GL256P11FAIV22Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CAT28F001H-90TRochester Electronics |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT34C02BY5-10YU-1.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
S29GL01GT13DHNV23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT44K32M18RB-107E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
X28HC64S-15Rochester Electronics |
EEPROM, 8KX8, 150NS, PARALLEL |
|
IS42VM16320E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C1372DV25-167BZXCRochester Electronics |
ZBT SRAM, 1MX18, 3.4NS |
|
CY7C1049GN30-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
SST39SF010A-70-4C-WHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
