English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | SPI - Quad I/O, QPI, DTR |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 800µs |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WSON (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL064LABMFB000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
AS7C34098A-15JINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
24FC08T-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
IS42S83200G-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY7C1145KV18-400BZXCRochester Electronics |
QDR SRAM, 512KX36, 0.45NS PBGA16 |
|
IS43TR16640AL-125JBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
93AA46C-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8TSSOP |
|
AT93C66B-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 8MINI MAP |
|
IS42VM32400H-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1412AV18-200BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
M24512-DRMN8TP/KSTMicroelectronics |
IC EEPROM 512KBIT I2C 1MHZ 8SO |
|
S25FL128SAGBHIZ00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
71V25761S166PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
