类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 1Kb (128 x 8) |
内存接口: | 1-Wire® |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.8V ~ 6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BQ2024DBZRG4Texas Instruments |
IC EPROM 1.5KBIT SGL WIRE SOT23 |
|
CY7C1420JV18-300BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
SST26VF020AT-104I/SNRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI/QUAD 8SOIC |
|
C2663KV18-450BZIRochester Electronics |
IC SRAM 144MBIT 450MHZ 165FBGA |
|
93C56CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8TSSOP |
|
FM24C64ENRochester Electronics |
IC EEPROM 64KBIT I2C 100KHZ 8DIP |
|
71V65703S75PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
RC28F128P33B85BRochester Electronics |
IC FLASH 128MBIT CFI 64EASYBGA |
|
MT48LC4M32B2B5-6A AAT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
70V3379S6BCRenesas Electronics America |
IC SRAM 576KBIT PAR 256CABGA |
|
25C080/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
71256L100DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
24LC32AF-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |