English
简体中文
IC SRAM 4MBIT PARALLEL 48TFBGA
CMC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-LFBGA |
| 供应商设备包: | 48-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46H128M16LFDD-48 WT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
24LC1026T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
NM24C03FLZEM8Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SO |
|
CY7C1470BV25-167BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70T631S12BCIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
AT24C512C-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
UPD46185094BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 2MX9, 0.45NS |
|
IS66WVE4M16EALL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
IS43LD32640B-25BPLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
FM24C03ULNRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
CAT25040LRochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8DIP |
|
AT28HC64BF-12SU-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
MX25U12835FM2I-10GMacronix |
IC FLASH 128MBIT SPI/QUAD 8SOP |