类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC320A-I/PRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8DIP |
|
AS7C31026B-20TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
IS43DR82560C-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
CY7C1425AV18-200BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MX29GL512FLXFI-10QMacronix |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
S25FL256LAGNFM010Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
24FC02T-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
AT25DF512C-MAHNGU-TAdesto Technologies |
IC FLASH 512KBIT SPI 8UDFN |
|
GS880Z36CGT-333IGSI Technology |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS43R16800E-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
CAT25010VI-GRochester Electronics |
CAT25010 - 1-KBIT SPI SERIAL EEP |
|
IS42VM32200M-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
DS24B33G+T&RMaxim Integrated |
IC EEPROM 4KBIT 1-WIRE 2SFN |