English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V65703S85BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
S25FL128SAGMFI001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
S27KS0642GABHI020Cypress Semiconductor |
IC PSRAM 64MBIT HYPERBUS 24FBGA |
|
MX25L6406EZNI-12GFMacronix |
IC FLASH 64MBIT SPI 86MHZ 8WSON |
|
CY7C1360C-166BZXCRochester Electronics |
CACHE SRAM, 256KX36, 3.5NS |
|
23A512T-E/SNRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8SOIC |
|
S29GL256N10TFI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS42S16400J-7B2LIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 60TFBGA |
|
DS1245Y-120IND+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
70V9199L9PFGIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
71V65603ZS133PFGRochester Electronics |
71V65603 - 256K X 36 3.3V SYNCHR |
|
CY7C1470V25-167BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
MT29F32G08CBADBWP-12IT:DMicron Technology |
IC FLASH 32GBIT PAR 48TSOP I |
