类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 66 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C256C-SSHLEM-TRochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
CY7C09159AV-12ACCypress Semiconductor |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
7134LA20JG8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
CY14B104LA-BA45XITCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
CY7C195-15VCRochester Electronics |
STANDARD SRAM, 64KX4, 15NS |
|
AS4C64M4SA-7TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
93LC66A/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
MT53E256M32D2DS-046 AAT:B TRMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
S25FL256LDPMFV001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
SMJ5C1008-25JDCMRochester Electronics |
STANDARD SRAM, 128KX8 |
|
71V3579YS85PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1387D-167BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
70V06L20JGIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |